| PART |
Description |
Maker |
| AT49LV4096A AT49BV4096A AT49LV4096A-70C5I |
256K X 16 FLASH 2.7V PROM, 70 ns, PBGA48
4M bit, 2.7-Volt Read and 2.7-Volt Write, Byte-Write Flash, Bottom Boot
4M bit, 3.0-Volt Read and 3.0-Volt Write, Byte-Write Flash, Bottom Boot
|
ATMEL CORP
|
| AT49BV8011 AT49BV8011-12CI AT49LV8011 AT49LV8011-9 |
8M bit. 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash. Bottom Boot 800万位2.7伏读取和2.7伏字节写扇区闪存。底部启
x8/x16 Flash EEPROM x8/x16闪存EEPROM
8-megabit (512K x 16/1M x 8) 3-volt Only Flash Memory
|
3M Company
Atmel, Corp.
AMIC Technology, Corp.
Advanced Micro Devices, Inc.
ATMEL[ATMEL Corporation]
|
| AT49BV162A AT49BV162AT |
16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Bottom Boot
16M bit, 2.7-Volt Read and 2.7-Volt Byte-Write Sectored Flash, Single Pane, Top Boot
|
Atmel
|
| AT49BV2048 AT49LV2048 AT49LV2048A AT49LV2048A-70RC |
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage??Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 2兆位56 × 8/128K × 16）单2.7伏电池电压⑩闪存
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 3V PROM, 70 ns, PDSO44
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-VoltageFlash Memory 128K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage⑩ Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage Flash Memory
2-megabit (256K x 8/128K x 16) Single 2.7-volt Battery-Voltage?/a> Flash Memory
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| CDLL4620 CDLL4614 CDLL4615 CDLL4616 CDLL4617 CDLL4 |
4.3 volt zener diode
3.3 volt zener diode
5.1 volt zener diode
3.9 volt zener diode
2.4 volt zener diode
LEADLESS PACKAGE FOR SURFACE MOUNT
2-of-3 Decoder/Demultiplexer 8-US8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-SM8 -40 to 85
2-of-3 Decoder/Demultiplexer 8-DSBGA -40 to 85
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
4.7 volt zener diode
5.6 volt zener diode
2.2 volt zener diode
3.6 volt zener diode
2.0 volt zener diode
|
Compensated Devices Incorporated
CDI-DIODE[Compensated Deuices Incorporated]
|
| S29CD-J12 S29CL016J S29CL032J |
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O
32/16 Megabit CMOS 2.6 Volt or 3.3 Volt-Only Simultaneous Read/Write, Dual Boot, Burst Mode Flash Memory with VersatileI/O?
|
SPANSION
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| Q7010LH5 Q7010RH5 Q7012LH5 Q7012RH5 Q7015L6 Q7015R |
Alternistor triac, 25A, 800 Volt
Alternistor triac, 15A, 400 Volt
Alternistor triac, 25A, 500 Volt
Alternistor triac, 25A, 200 Volt
Alternistor triac, 8A, 500 Volt
Alternistor triac, 25A, 400 Volt
Gender:Socket; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-35
Alternistor Triacs 交变双向
Alternistor triac, 6A, 500 Volt
Alternistor triac, 15A, 200 Volt
Alternistor triac, 15A, 500 Volt
Alternistor triac, 15A, 600 Volt
Alternistor Triacs
|
TECCOR[Teccor Electronics]
Littelfuse, Inc.
Motorola Mobility Holdings, Inc.
|
| S29NS-J S29NS032J0PBAW003 S29NS064J0PBAW00 S29NS06 |
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 110纳米CMOS 1.8伏只有同时读/写，突发模式闪存
110 nm CMOS 1.8-Volt only Simultaneous Read/Write, Burst Mode Flash Memories 2M X 16 FLASH 1.8V PROM, 65 ns, PBGA44
|
Spansion Inc.
Spansion, Inc.
|
| AM28F020 AM28F021 AM28F020-120EC AM28F020-120EE AM |
3 Megabit (256 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory(509.20 k)
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Male; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
Rectangular Connector; Body Material:Polyester; Series:8016; Number of Contacts:38; Contact Material:Phosphor Bronze; Contact Plating:Gold Over Nickel; Gender:Female; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| S71NS-N |
MirrorBit? 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
MirrorBit㈢ 1.8 Volt-only Simultaneous Read/Write, Burst-mode Multiplexed Flash Memory
|
SPANSION
|
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